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| 2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO Ratings 150 120 40 160 30 40 387 20 5 2.16 70 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *6 kVrms *1 L=335H, Vcc=48V *2 Tch< 150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 150V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V VDS=120V VGS=0V VGS=30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=20A VGS=10V RGS=10 VCC=75V ID=40A VGS=10V L=100H Tch=25C IF=40A VGS=0V Tch=25C IF=40A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 31 26 1940 310 24 20 26 50 20 52 15 18 1.10 0.14 0.77 Min. 150 3.0 Typ. Max. 5.0 25 250 100 41 2910 465 36 30 39 75 30 78 22.5 27 1.65 Units V V A nA m S pF 13 ns nC 40 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.786 58.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3591-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A 500 80 70 400 60 50 40 30 20 100 10 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 300 EAV [mJ] PD [W] 200 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 160 20V 100 10V 120 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 80 7.5V 7.0V ID[A] 8V 10 1 40 6.5V 6.0V VGS=5.5V 0.1 12 0 1 2 3 4 5 6 7 8 9 10 0 0 2 4 6 8 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.15 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 0.12 6.5V 7.0V 7.5V RDS(on) [ ] 10 0.09 8V gfs [S] 10V 0.06 20V 1 0.03 0.1 0.1 0.00 1 10 100 0 40 80 120 160 ID [A] ID [A] 2 2SK3591-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=20A,VGS=10V 100 90 80 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 5.0 max. RDS(on) [ m ] VGS(th) [V] 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 typ. max. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=40A, Tch=25C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 10 VGS [V] 8 6 C [nF] Vcc= 75V Coss 10 4 -1 Crss 2 0 0 20 40 60 80 -2 10 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 2 10 td(off) IF [A] t [ns] td(on) 1 1 10 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3591-01MR Transient Thermal Impedance Zth(ch-c)=f(t):Duty=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [ C/W] o 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Single Pulse Avalanche current IAV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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